? semiconductor components industries, llc, 2014 may, 2014 ? rev. 1 publication order number: imd10amt1g/d imd10amt1g dual bias resistor transistor npn and pnp silicon surface mount transistors with monolithic bias resistor network ? high current: i c = 500 ma max ? this is a pb?free device maximum ratings (t a = 25 c) rating symbol value unit collector?base voltage v (br)cbo 50 vdc collector?emitter voltage v (br)ceo 50 vdc emitter?base voltage v (br)ebo 5.0 vdc collector current ? continuous i c 500 madc thermal characteristics characteristic symbol max unit power dissipation* p d 285 mw junction temperature t j 150 c storage temperature t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. *total for both transistors. sc?74 marking diagram d10 m d10 = specific device code m = date code = pb?free package device package shipping ? ordering information imd10amt1g sc?74r (pb?free) 3000 / tape & reel q 1 http://onsemi.com q2 r1 r1 (3) (5) (1) (6) (2) (4) sc?74r 318aa style 21 1 6 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. r2
imd10amt1g http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 , ? minus sign for q 1 (pnp) omitted) characteristic symbol min max unit off characteristics collector?base breakdown voltage (i c = 50 adc, i e = 0 a) v (br)cbo 50 ? vdc collector?emitter breakdown voltage (i c = 1.0 madc, i b = 0 a) v (br)ceo 50 ? vdc emitter?base breakdown voltage (i e = 50 adc, i c = 0 a) v (br)ebo 5.0 ? vdc collector?base cutoff current (v cb = 50 vdc, i e = 0 a) i cbo ? 100 na emitter?base cutoff current q1 (pnp) (v eb = 6.0 vdc, i c = 0 a) q2 (npn) i ebo ? ? 1.0 0.5 ma collector?emitter cutoff current (v ce = 15 vdc, i b = 0 a) i ceo ? 500 na collector?emitter cutoff current (v ce = 25 vdc, i b = 0 a) i ces ? 100 na on characteristics (note 1) dc current gain (v ce = 5.0 v, i c = 100 ma) q1(pnp) (v ce = 5.0 v, i c = 1.0 ma) q2(npn) h fe 68 100 ? 600 collector?emitter saturation voltage (i c = 10 ma, i b = 1.0 ma) v ce(sat) ? 0.3 vdc output voltage (on) (v cc = 5.0 v, v b = 2.5 v, r l = 1.0 k ) v ol ? 0.2 vdc output voltage (off) (v cc = 5.0 v, v b = 0.25 v, r l = 1.0 k ) v ol 4.9 ? vdc input resistor q1(pnp) q2(npn) r1 70 7.0 130 13 k resistor ratio q1(pnp) q2(npn) r1/r2 0.008 ? 0.012 ? 1. pulse test: pulse width 300 s, duty cycle < 2.0%.
imd10amt1g http://onsemi.com 3 typical characteristics (npn) figure 1. dc current gain figure 2. collector?emitter saturation voltage i c , collector current (ma) i c , collector current (ma) 100 10 1 10 100 1000 100 10 1 0.01 0.1 1 10 figure 3. output current vs. input voltage figure 4. input voltage vs. output current v in , input voltage (v) i c , collector current (ma) 4 3 2 1 0 0.001 0.01 0.1 1 10 100 1000 100 10 1 0.1 1 10 100 figure 5. output capacitance v r , reverse bias voltage (v) 50 40 30 20 10 0 0 1 2 3 4 h fe , dc current gain v ce , collector?emitter saturation voltage (v) i c , collector current (ma) v in , input voltage (v) c ob , capacitance (pf) v ce = 5 v 75 c 25 c ?25 c 75 c 25 c ?25 c i c /i b = 10 75 c 25 c ?25 c v o = 5 v 75 c 25 c ?25 c v o = 0.2 v
imd10amt1g http://onsemi.com 4 typical characteristics (pnp) i c , collector current (ma) v in , input voltage (v) 1000 100 10 1 0.01 0.1 1 4 3 2 1 0 0.001 0.01 0.1 1 10 100 1000 i c , collector current (ma) v r , reverse bias voltage (v) 1000 100 10 1 0.1 1 10 50 40 30 20 10 0 0 5 10 15 20 25 v ce , collector?emitter saturation voltage (v) i c , collector current (ma) v in , input voltage (v) c ob , capacitance (pf) 75 c 25 c ?25 c i c /i b = 10 75 c 25 c ?25 c v o = 5 v 75 c 25 c ?25 c v o = 0.2 v figure 6. dc current gain i c , collector current (ma) 1000 100 10 1 10 100 1000 h fe , dc current gain v ce = 5 v 75 c 25 c ?25 c figure 7. collector?emitter saturation voltage figure 8. output current vs. input voltage figure 9. input voltage vs. output current figure 10. output capacitance
imd10amt1g http://onsemi.com 5 package dimensions sc?74r case 318aa issue b 2 3 456 d 1 e b e a1 a 0.05 (0.002) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. c l style 21: pin 1. collector 1 2. emitter 2 3. base 2 4. collector 2 5. emitter 1 6. base 1 0.7 0.028 1.9 0.074 0.95 0.037 2.4 0.094 1.0 0.039 0.95 0.037 mm inches scale 10:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.90 1.00 1.10 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.25 0.37 0.50 0.010 c 0.10 0.18 0.26 0.004 d 2.90 3.00 3.10 0.114 e 1.30 1.50 1.70 0.051 e 0.85 0.95 1.05 0.034 l 0.20 0.40 0.60 0.008 0.039 0.043 0.002 0.004 0.015 0.020 0.007 0.010 0.118 0.122 0.059 0.067 0.037 0.041 0.016 0.024 nom max 2.50 2.75 3.00 0.099 0.108 0.118 h e ? ? 0 1 0 0 1 0 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 imd10amt1g/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
|
